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MJE800

更新时间： 2025-09-20 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 259K
描述
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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中文翻译

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MJE800 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.12
Is Samacsys：N最大集电极电流 (IC)：4 A
集电极-发射极最大电压：60 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：100JEDEC-95代码：TO-225AA
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：40 W
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：1 MHz
VCEsat-Max：3 VBase Number Matches：1

MJE800 数据手册

 浏览型号MJE800的Datasheet PDF文件第1页浏览型号MJE800的Datasheet PDF文件第3页浏览型号MJE800的Datasheet PDF文件第4页浏览型号MJE800的Datasheet PDF文件第5页浏览型号MJE800的Datasheet PDF文件第6页 
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (1)  
(I = 50 mAdc, I = 0)  
MJE700,T, MJE800,T  
MJE702, MJE703, MJE802, MJE803  
V
60  
80  
—
—
Vdc  
(BR)CEO  
C
B
Collector Cutoff Current  
I
µAdc  
CEO  
CBO  
(V  
CE  
(V  
CE  
= 60 Vdc, I = 0)  
MJE700,T, MJE800,T  
MJE702, MJE703, MJE802, MJE803  
—
—
100  
100  
B
= 80 Vdc, I = 0)  
B
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated BV  
= Rated BV  
, I = 0)  
I
—
—
100  
500  
µAdc  
CB  
CB  
CEO  
CEO  
E
, I = 0, T = 100 C)  
E
C
Emitter Cutoff Current (V  
ON CHARACTERISTICS  
DC Current Gain (1)  
= 5.0 Vdc, I = 0)  
I
EBO  
—
2.0  
mAdc  
BE  
C
h
FE  
—
(I = 1.5 Adc, V  
= 3.0 Vdc)  
= 3.0 Vdc)  
= 3.0 Vdc)  
MJE700,T, MJE702, MJE800,T, MJE802  
MJE703, MJE803  
750  
750  
100  
—
—
—
C
CE  
CE  
CE  
(I = 2.0 Adc, V  
C
(I = 4.0 Adc, V  
All devices  
C
Collector–Emitter Saturation Voltage (1)  
(I = 1.5 Adc, I = 30 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
MJE700,T, MJE702, MJE800,T, MJE802  
MJE703, MJE803  
—
—
—
2.5  
2.8  
3.0  
C
B
(I = 2.0 Adc, I = 40 mAdc)  
C
C
B
B
(I = 4.0 Adc, I = 40 mAdc)  
All devices  
Base–Emitter On Voltage (1)  
V
BE(on)  
(I = 1.5 Adc, V  
= 3.0 Vdc)  
= 3.0 Vdc)  
= 3.0 Vdc)  
MJE700,T, MJE702, MJE800,T, MJE802  
MJE703, MJE803  
—
—
—
2.5  
2.5  
3.0  
C
CE  
CE  
CE  
(I = 2.0 Adc, V  
C
(I = 4.0 Adc, V  
All devices  
C
DYNAMIC CHARACTERISTICS  
Small–Signal Current Gain (I = 1.5 Adc, V  
= 3.0 Vdc, f = 1.0 MHz)  
h
fe  
1.0  
—
—
C
CE  
(1) Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2.0%.  
4.0  
V
V
= 30 V  
/I = 250  
I
T
= I  
= 25 C  
CC  
CC  
B1 B2  
J
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS  
C
B
– 30 V  
t
I
°
s
C B  
D , MUST BE FAST RECOVERY TYPE, e.g.:  
1
1N5825 USED ABOVE I  
≈
100 mA  
100 mA  
2.0  
B
R
C
MSD6100 USED BELOW I  
≈
SCOPE  
B
TUT  
t
V
f
R
2
B
APPROX  
+ 8.0 V  
1.0  
0.8  
≈
6.0 k  
≈
150  
51  
D
1
t
0
r
0.6  
V
1
APPROX  
–12 V  
0.4  
+ 4.0 V  
t
@ V  
= 0  
d
BE(off)  
2.0  
25 µs  
For t and t , D id disconnected  
d
r
1
B
PNP  
NPN  
and V = 0, R and R are varied  
2
C
t , t  
≤
10 ns  
r
f
to obtain desired test currents.  
0.2  
0.04  
DUTY CYCLE = 1.0%  
For NPN test circuit, reverse diode,  
polarities and input pulses.  
0.1  
0.2  
0.4 0.6  
1.0  
4.0  
0.06  
I
, COLLECTOR CURRENT (AMP)  
C
Figure 2. Switching Times Test Circuit  
Figure 3. Switching Times  
1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
0.1  
0.07  
0.05  
P
(pk)  
Z
R
= r(t) R  
θ
θ
θ
JC(t)  
JC  
JC  
°C/W MAX  
0.05  
0.02  
= 2.50  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
t
0.03  
0.02  
1
READ TIME AT t  
1
t
0.01  
2
T
– T = P  
Z
θ
J(pk)  
C
(pk)  
JC(t)  
20  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.01  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
50  
100  
200  
500  
1.0 k  
t, TIME (ms)  
Figure 4. Thermal Response (MJE700T, 800T Series)  
Motorola Bipolar Power Transistor Device Data  
2
123456

中文翻译

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