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MJE800T PDF预览

MJE800T

更新时间： 2024-11-25 22:33:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 259K
描述
DARLINGTON POWER TRANSISTORS COMPLEMENTARY

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中文翻译

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MJE800T 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, CASE 221A-06, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.13
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：4 A集电极-发射极最大电压：60 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：750
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：225
极性/信道类型：NPN最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：1 MHz
Base Number Matches：1

MJE800T 数据手册

 浏览型号MJE800T的Datasheet PDF文件第2页浏览型号MJE800T的Datasheet PDF文件第3页浏览型号MJE800T的Datasheet PDF文件第4页浏览型号MJE800T的Datasheet PDF文件第5页浏览型号MJE800T的Datasheet PDF文件第6页 
Order this document  
by MJE700/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
•
•
•
High DC Current Gain —  
= 2000 (Typ) @ I = 2.0 Adc  
Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage  
Multiplication  
h
FE  
C
Choice of Packages —  
MJE700 and MJE800 series  
T0220AB, MJE700T and MJE800T  
MAXIMUM RATINGS  
4.0 AMPERE  
DARLINGTON  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
MJE702  
MJE703  
MJE802  
MJE803  
MJE700,T  
MJE800,T  
Rating  
Symbol  
Unit  
Collector–Emitter Voltage  
V
CEO  
60  
60  
80  
80  
Vdc  
40 WATT  
50 WATT  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CB  
Vdc  
Vdc  
Adc  
Adc  
V
EB  
5.0  
4.0  
0.1  
I
C
Base Current  
I
B
CASE 77  
TO–220  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
40  
0.32  
50  
0.40  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
–55 to +150  
C
J
CASE 77–08  
TO–225AA TYPE  
MJE700–703  
MJE800–803  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
C/W  
θJC  
CASE 77  
TO–220  
3.13  
2.50  
50  
40  
30  
20  
TO–220AB  
TO–126  
CASE 221A–06  
TO–220AB  
MJE700T  
10  
0
MJE800T  
25  
50  
75  
100  
125  
150  
T
, CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
REV 3  
Motorola, Inc. 1995
123456

中文翻译

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
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 		暂无描述
MJE800TD1 MOTOROLA

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 		4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE800TL MOTOROLA

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 		4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE800TN MOTOROLA

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 		4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE800TS MOTOROLA

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti

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