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MJE800G PDF预览

MJE800G

更新时间： 2024-11-03 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管放大器局域网
页数 文件大小 规格书
6页 85K
描述
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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中文翻译

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MJE800G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-225包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.74其他特性：BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：4 A集电极-发射极最大电压：60 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：750
JEDEC-95代码：TO-225JESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：40 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Matte Tin (Sn) - annealed
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：1 MHz

MJE800G 数据手册

 浏览型号MJE800G的Datasheet PDF文件第2页浏览型号MJE800G的Datasheet PDF文件第3页浏览型号MJE800G的Datasheet PDF文件第4页浏览型号MJE800G的Datasheet PDF文件第5页浏览型号MJE800G的Datasheet PDF文件第6页 
MJE700, MJE702, MJE703  
(PNP) − MJE800, MJE802,  
MJE803 (NPN)  
Plastic Darlington  
Complementary Silicon  
Power Transistors  
http://onsemi.com  
These devices are designed for general−purpose amplifier and  
low−speed switching applications.  
4.0 AMPERE  
DARLINGTON POWER  
TRANSISTORS  
Features  
• High DC Current Gain − h = 2000 (Typ) @ I  
COMPLEMENTARY SILICON  
40 WATT  
FE  
C
= 2.0 Adc  
• Monolithic Construction with Built−in Base−Emitter Resistors to  
Limit Leakage − Multiplication  
50 WATT  
• Choice of Packages − MJE700 and MJE800 Series  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO−225  
CASE 77  
STYLE 1  
Collector−Emitter Voltage  
V
Vdc  
CEO  
MJE700, MJE800  
MJE702, MJE703, MJE802, MJE803  
60  
80  
3
2
1
Collector−Base Voltage  
V
Vdc  
CB  
EB  
MJE700, MJE800  
60  
80  
MJE702, MJE703, MJE802, MJE803  
Emitter−Base Voltage  
Collector Current  
Base Current  
V
5.0  
4.0  
0.1  
Vdc  
Adc  
Adc  
I
I
C
MARKING DIAGRAM  
B
Total Power Dissipation @ T = 25_C  
P
40  
0.32  
W
mW/_C  
_C  
C
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–55 to +150  
stg  
YWW  
JEx0yG  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
q
6.25  
_C/W  
JC  
Y
= Year  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
WW  
= Work Week  
JEx0y = Device Code  
x = 7 or 8  
y = 0, 2, or 3  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 8  
MJE700/D  
123456

中文翻译

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MJE800G 替代型号

型号 品牌 替代类型 描述 数据表
KSE800STU ONSEMI

完全替代

 NPN外延硅达林顿晶体管
MJE800 ONSEMI

类似代替

 DARLINGTON POWER TRANSISTORS COMPLEMENTARY
BD677A STMICROELECTRONICS

功能相似

 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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