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MJE800T

更新时间： 2024-11-04 14:54:43
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 509K
描述
4A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

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中文翻译

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MJE800T 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-220AB
包装说明：TO-220, 3 PIN针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.13
外壳连接：COLLECTOR最大集电极电流 (IC)：4 A
集电极-发射极最大电压：60 V配置：DARLINGTON
最小直流电流增益 (hFE)：750JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：50 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：1 MHzBase Number Matches：1

MJE800T 数据手册

 浏览型号MJE800T的Datasheet PDF文件第2页浏览型号MJE800T的Datasheet PDF文件第3页浏览型号MJE800T的Datasheet PDF文件第4页浏览型号MJE800T的Datasheet PDF文件第5页浏览型号MJE800T的Datasheet PDF文件第6页浏览型号MJE800T的Datasheet PDF文件第7页 
MJE700T THRU MJE703T PNP  
MJE800T THRU MJE803T NPN  
www.centralsemi.com  
COMPLEMENTARY  
POWER DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MJE700T, MJE800T  
series devices are medium power complementary  
silicon Darlington transistors designed for audio amplifier  
applications as complementary output devices.  
MARKING: FULL PART NUMBER  
TO-220 CASE  
MJE700T  
MJE701T  
MJE800T  
MJE801T  
60  
MJE702T  
MJE703T  
MJE802T  
MJE803T  
80  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
80  
V
V
5.0  
4.0  
100  
50  
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
A
C
I
mA  
W
B
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
2.5  
°C  
J
stg  
Θ
°C/W  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=5.0V  
100  
500  
100  
2.0  
μA  
CBO  
CBO  
CEO  
EBO  
CB  
CB  
CE  
EB  
CBO  
CBO  
CEO  
, T =100°C  
μA  
μA  
mA  
V
C
BV  
I =50mA (MJE702T,703T,802T,803T)  
80  
60  
CEO  
CEO  
C
BV  
I =50mA (MJE700T,701T,800T,801T)  
V
C
V
V
V
V
V
V
I =1.5A, I =30mA (MJE700T,702T,800T,802T)  
2.5  
2.8  
3.0  
2.5  
2.5  
3.0  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
BE(ON)  
FE  
C
B
I =2.0A, I =40mA (MJE701T,703T,801T,803T)  
V
C
B
I =4.0A, I =40mA  
V
C
B
V
=3.0V, I =1.5A (MJE700T,702T,800T,802T)  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
=3.0V, I =2.0A (MJE701T,703T,801T,803T)  
V
C
=3.0V, I =4.0A  
V
C
h
h
h
=3.0V, I =1.5A (MJE700T,702T,800T,802T)  
750  
750  
100  
1.0  
C
=3.0V, I =2.0A (MJE701T,703T,801T,803T)  
FE  
C
=3.0V, I =4.0A  
FE  
C
f
=3.0V, I =1.5A, f=1.0MHz  
MHz  
T
C
R1 (23-January 2014)  
1234567...18

中文翻译

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MJE800T 替代型号

型号 品牌 替代类型 描述 数据表
MJE800G ONSEMI

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MJE800TD1 MOTOROLA

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MJE800TS MOTOROLA

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