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MJE800STU PDF预览

MJE800STU

更新时间: 2024-11-26 13:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 259K
描述
4.0 A, 60 V NPN Darlington Bipolar Power Transistor, 1920-TUBE

MJE800STU 技术参数

是否无铅: 不含铅生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.29
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

MJE800STU 数据手册

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Order this document  
by MJE700/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2000 (Typ) @ I = 2.0 Adc  
Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage  
Multiplication  
h
FE  
C
Choice of Packages —  
MJE700 and MJE800 series  
T0220AB, MJE700T and MJE800T  
MAXIMUM RATINGS  
4.0 AMPERE  
DARLINGTON  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
MJE702  
MJE703  
MJE802  
MJE803  
MJE700,T  
MJE800,T  
Rating  
Symbol  
Unit  
Collector–Emitter Voltage  
V
CEO  
60  
60  
80  
80  
Vdc  
40 WATT  
50 WATT  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CB  
Vdc  
Vdc  
Adc  
Adc  
V
EB  
5.0  
4.0  
0.1  
I
C
Base Current  
I
B
CASE 77  
TO–220  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
40  
0.32  
50  
0.40  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
55 to +150  
C
J
CASE 77–08  
TO–225AA TYPE  
MJE700703  
MJE800803  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
C/W  
θJC  
CASE 77  
TO–220  
3.13  
2.50  
50  
40  
30  
20  
TO–220AB  
TO–126  
CASE 221A–06  
TO–220AB  
MJE700T  
10  
0
MJE800T  
25  
50  
75  
100  
125  
150  
T
, CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
REV 3  
Motorola, Inc. 1995

MJE800STU 替代型号

型号 品牌 替代类型 描述 数据表
BD677G ONSEMI

类似代替

中等功率 NPN 达林顿双极功率晶体管
MJE800G ONSEMI

功能相似

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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