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MJE800G PDF预览

MJE800G

更新时间: 2024-11-26 20:15:07
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 局域网放大器晶体管
页数 文件大小 规格书
7页 814K
描述
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN

MJE800G 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:TO-225包装说明:LEAD FREE, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.13Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):750JEDEC-95代码:TO-225
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:COMMERCIAL表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1 MHzBase Number Matches:1

MJE800G 数据手册

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