MJE701

更新时间： 2024-11-02 22:33:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	54K
描述
Monolithic Construction With Built-in Base- Emitter Resistors

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MJE701 数据手册

MJE700/701/702/703

Monolithic Construction With Built-in Base-

Emitter Resistors

FE C

Complement to MJE800/801/802/803

•

High DC Current Gain : h = 750 (Min.) @ I = -1.5 and -2.0A DC

TO-126

1. Emitter 2.Collector 3.Base

PNP Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Sym-

bol

Unit

Parameter

Value

Collector- Base Voltage : MJE700/701

: MJE702/703

- 60

- 80

CBO

CEO

EBO

Collector-Emitter Voltage : MJE700/701

: MJE702/703

- 60

- 80

Emitter- Base Voltage

Collector Current

Base Current

- 5

- 4

- 0.1

R1 10 k Ω

R2 0.6 k Ω

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max. Units

Collector-Emitter Breakdown Voltage

: MJE700/701

CEO

= - 10mA, I = 0

-60

-80

: MJE702/703

Collector Cut-off Current

: MJE700/701

CEO

= - 60V, I = 0

= - 80V, I = 0

-100

µA

: MJE702/703

Collector Cut-off Current

= Rated BV

, I = 0

-100

-500

µA

CBO

CEO

, I = 0

= 100°C

Emitter Cut-off Current

= - 5V, I = 0

-2

EBO

DC Current Gain

: MJE700/702

: MJE701/703

: ALL DEVICES

= - 3V, I = - 1.5A

750

100

= - 3V, I = - 2A

= - 3V, I = - 4A

(sat)

(on)

Collector-Emitter Saturation Voltage

: MJE700/702

= - 1.5A, I = - 30mA

-2.5

-2.8

-3

: MJE701/703

: ALL DEVICES

= - 2A, I = - 40mA

= - 4A, I = - 40mA

Base-Emitter On Voltage

: MJE700/702

= - 3V, I = - 1.5A

-1.2

-2.5

-3

: MJE701/703

: ALL DEVICES

= - 3V, I = - 2A

= - 3V, I = - 4A

Rev. A1, February 2001

12 3 4

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