5秒后页面跳转
MJE703G PDF预览

MJE703G

更新时间: 2024-11-26 20:15:07
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 局域网放大器晶体管
页数 文件大小 规格书
7页 814K
描述
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN

MJE703G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225包装说明:LEAD FREE, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.11Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):750JEDEC-95代码:TO-225
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:COMMERCIAL表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MJE703G 数据手册

 浏览型号MJE703G的Datasheet PDF文件第2页浏览型号MJE703G的Datasheet PDF文件第3页浏览型号MJE703G的Datasheet PDF文件第4页浏览型号MJE703G的Datasheet PDF文件第5页浏览型号MJE703G的Datasheet PDF文件第6页浏览型号MJE703G的Datasheet PDF文件第7页 

与MJE703G相关器件

型号 品牌 获取价格 描述 数据表
MJE703LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
MJE703T ISC

获取价格

isc Silicon PNP Darlington Power Transistor
MJE703T MOSPEC

获取价格

POWER TRANSISTORS(4.0A,60-80V,40W)
MJE703T NJSEMI

获取价格

Trans Darlington PNP 80V 4A 3-Pin(3+Tab) TO-220 Box
MJE703TLEADFREE CENTRAL

获取价格

暂无描述
MJE710 CENTRAL

获取价格

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
MJE710_08 CENTRAL

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJE710LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
MJE711 CENTRAL

获取价格

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
MJE711LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti