5秒后页面跳转
MJE702TLEADFREE PDF预览

MJE702TLEADFREE

更新时间: 2024-11-26 15:43:07
品牌 Logo 应用领域
CENTRAL 局域网放大器晶体管
页数 文件大小 规格书
1页 34K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

MJE702TLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.19
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:DARLINGTON
最小直流电流增益 (hFE):750JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1 MHz
Base Number Matches:1

MJE702TLEADFREE 数据手册

  
TO-220  
TO-220FP Full Pak  
• Fully Isolated  
Power Transistors  
TO-220 Case (Continued)  
Standard  
Optional  
@ I  
TYPE NO.  
I
P
BV  
BV  
h
@ I  
V
f
T
C
D
CBO  
CEO  
FE  
C
CE(SAT)  
C
(A)  
MAX  
(W)  
(V)  
MIN  
(V)  
MIN  
(A)  
(V)  
MAX  
(A)  
(MHz)  
MIN  
NPN  
PNP  
MIN  
10  
MAX  
2N6497  
2N6498  
2N6499  
2N6530  
2N6531  
2N6532  
2N6533  
BU406  
5.0  
5.0  
5.0  
8.0  
8.0  
8.0  
8.0  
7.0  
7.0  
7.0  
7.0  
7.0  
7.0  
8.0  
8.0  
4.0  
10  
80  
80  
80  
65  
65  
65  
65  
60  
60  
60  
60  
60  
60  
60  
60  
30  
50  
50  
50  
50  
50  
75  
75  
75  
75  
80  
80  
80  
100  
100  
350  
400  
450  
80  
250  
300  
350  
80  
75  
75  
75  
2.5  
2.5  
2.5  
5.0  
5.0  
5.0  
3.0  
3.0  
3.0  
3.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.5  
1.5  
0.5  
1.0  
2.5  
2.8  
2.5  
2.8  
- -  
5.0  
5.0  
5.0  
8.0  
8.0  
8.0  
8.0  
5.0  
5.0  
5.0  
5.0  
6.0  
6.0  
5.0  
5.0  
1.0  
8.0  
1.5  
2.0  
1.5  
2.0  
- -  
5.0  
5.0  
5.0  
20  
10  
10  
1,000 10,000 5.0  
500 10,000 3.0  
100  
100  
120  
400  
400  
330  
330  
400  
400  
400  
330  
80  
100  
100  
120  
200  
200  
150  
150  
200  
200  
200  
150  
80  
20  
1,000 10,000 5.0  
1,000 10,000 3.0  
20  
20  
- -  
- -  
- -  
- -  
- -  
- -  
10  
BU406D  
BU407  
10  
- -  
- -  
- -  
10  
BU407D  
BU408  
- -  
- -  
- -  
10  
- -  
- -  
- -  
10  
BU408D  
BU806  
- -  
- -  
- -  
10  
- -  
- -  
- -  
- -  
BU807  
- -  
- -  
- -  
- -  
D44C11  
D44H11  
MJE800T  
MJE801T  
MJE802T  
MJE803T  
20  
- -  
2.0  
1.0  
1.5  
2.0  
1.5  
2.0  
3.0  
4.0  
2.0  
2.0  
5.0  
5.0  
5.0  
8.0  
8.0  
50  
D45H11  
80  
80  
40  
- -  
40  
MJE700T  
MJE701T  
MJE702T  
MJE703T  
4.0  
4.0  
4.0  
4.0  
60  
60  
750  
750  
750  
750  
25  
- -  
1.0  
1.0  
1.0  
1.0  
- -  
60  
60  
- -  
80  
80  
- -  
80  
80  
- -  
MJE2801T MJE2901T 10  
MJE3055T MJE2955T 10  
60  
60  
100  
100  
40  
40  
30  
30  
30  
30  
30  
70  
60  
20  
1.1  
0.5  
0.5  
1.0  
1.0  
3.0  
1.0  
1.0  
4.0  
1.0  
1.0  
2.0  
2.0  
8.0  
5.0  
5.0  
2.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
MJE13004  
MJE13005  
MJE13006  
MJE13007  
MJE13007A  
MJE13008  
MJE13009  
4.0  
4.0  
8.0  
8.0  
8.0  
12  
600  
700  
600  
700  
850  
600  
700  
300  
400  
300  
400  
400  
300  
400  
8.0  
8.0  
5.0  
5.0  
5.0  
6.0  
6.0  
12  
Shaded areas indicate Darlington.  
(6-December 2004)  
www.centralsemi.com  

与MJE702TLEADFREE相关器件

型号 品牌 获取价格 描述 数据表
MJE703 ONSEMI

获取价格

DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE703 SAMSUNG

获取价格

NPN (HIGH DC CURRENT GAIN)
MJE703 ISC

获取价格

isc Silicon PNP Darlington Power Transistor
MJE703 ASI

获取价格

Transistor
MJE703 FAIRCHILD

获取价格

Monolithic Construction With Built-in Base- Emitter Resistors
MJE703 MOTOROLA

获取价格

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE703 NJSEMI

获取价格

Trans Darlington PNP 80V 4A 3-Pin(3+Tab) TO-225 Bulk
MJE703 CENTRAL

获取价格

4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
MJE703G ONSEMI

获取价格

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE703G ROCHESTER

获取价格

4A, 80V, PNP, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN