MJE701T

更新时间： 2024-11-03 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	100K
描述
isc Silicon PNP Darlington Power Transistor

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中文翻译

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MJE701T 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

MJE701T

DESCRIPTION

·Collector–Emitter Breakdown Voltage—

: V_(BR)CEO=-60 V

·DC Current Gain—

: h_FE= 750(Min) @ I_C=-2A

·Complement to Type MJE801T

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

VALUE

-60

UNIT

-60

-5

-4

I_B

-0.1

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

-55~150

T_i

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

2.5 ℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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