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MJE701STU

更新时间： 2024-11-03 20:58:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网晶体管
页数 文件大小 规格书
4页 50K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

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MJE701STU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.65最大集电极电流 (IC)：4 A
集电极-发射极最大电压：60 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：750JEDEC-95代码：TO-126
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称过渡频率 (fT)：1 MHz
Base Number Matches：1

MJE701STU 数据手册

 浏览型号MJE701STU的Datasheet PDF文件第2页浏览型号MJE701STU的Datasheet PDF文件第3页浏览型号MJE701STU的Datasheet PDF文件第4页 
MJE700/701/702/703  
Monolithic Construction With Built-in Base-  
Emitter Resistors  
FE C  
Complement to MJE800/801/802/803  
•
•
High DC Current Gain : h = 750 (Min.) @ I = -1.5 and -2.0A DC  
TO-126  
1
1. Emitter 2.Collector 3.Base  
PNP Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Sym-  
bol  
Unit  
s
Parameter  
Value  
V
Collector- Base Voltage : MJE700/701  
: MJE702/703  
- 60  
- 80  
V
V
CBO  
CEO  
EBO  
B
V
Collector-Emitter Voltage : MJE700/701  
: MJE702/703  
- 60  
- 80  
V
V
V
I
Emitter- Base Voltage  
Collector Current  
Base Current  
- 5  
- 4  
V
A
R1  
R2  
C
I
- 0.1  
A
B
E
R1 10 k Ω  
R2 0.6 k Ω  
P
Collector Dissipation (T =25°C)  
40  
W
°C  
°C  
C
C
T
Junction Temperature  
Storage Temperature  
150  
J
T
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max. Units  
BV  
Collector-Emitter Breakdown Voltage  
: MJE700/701  
CEO  
I
= - 10mA, I = 0  
-60  
-80  
V
V
C
B
: MJE702/703  
I
I
I
Collector Cut-off Current  
: MJE700/701  
CEO  
V
V
= - 60V, I = 0  
= - 80V, I = 0  
B
-100  
-100  
µA  
µA  
CE  
CE  
B
: MJE702/703  
Collector Cut-off Current  
V
V
= Rated BV  
= Rated BV  
, I = 0  
-100  
-500  
µA  
µA  
CBO  
CB  
CB  
CEO  
CEO  
E
, I = 0  
E
T
= 100°C  
C
Emitter Cut-off Current  
V
= - 5V, I = 0  
-2  
mA  
EBO  
BE  
C
h
DC Current Gain  
: MJE700/702  
: MJE701/703  
: ALL DEVICES  
FE  
V
V
V
= - 3V, I = - 1.5A  
750  
750  
100  
CE  
CE  
CE  
C
= - 3V, I = - 2A  
C
= - 3V, I = - 4A  
C
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
: MJE700/702  
CE  
I
I
I
= - 1.5A, I = - 30mA  
-2.5  
-2.8  
-3  
V
V
V
C
C
C
B
: MJE701/703  
: ALL DEVICES  
= - 2A, I = - 40mA  
B
= - 4A, I = - 40mA  
B
V
Base-Emitter On Voltage  
: MJE700/702  
BE  
V
V
V
= - 3V, I = - 1.5A  
-1.2  
-2.5  
-3  
V
V
V
CE  
CE  
CE  
C
: MJE701/703  
: ALL DEVICES  
= - 3V, I = - 2A  
C
= - 3V, I = - 4A  
C
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
1234

中文翻译

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MJE701STU 替代型号

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