MJE703

更新时间： 2024-11-26 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	101K
描述
isc Silicon PNP Darlington Power Transistor

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MJE703 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

MJE703

DESCRIPTION

·Collector–Emitter Sustaining Voltage—

: V_CEO(SUS)= -80 V

·DC Current Gain—

: h_FE= 750(Min) @ I_C= -2 A

= 100(Min) @ I_C= -4A

·Complement to Type MJE803

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

VALUE

-80

UNIT

-80

-5

-4

I_B

-1

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

-55~150

T_i

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

℃/W

Thermal Resistance, Junction to Case 3.13

R_{th j-c}

isc Website：www.iscsemi.cn

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