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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MJE700TU2 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti |
|
| MJE700TUA | MOTOROLA |
获取价格 |
暂无描述 |
|
| MJE701 | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor |
|
| MJE701 | FAIRCHILD |
获取价格 |
Monolithic Construction With Built-in Base- Emitter Resistors |
|
| MJE701 | SAMSUNG |
获取价格 |
NPN (HIGH DC CURRENT GAIN) |
|
| MJE701 | NJSEMI |
获取价格 |
Trans Darlington PNP 60V 4A 3-Pin(3+Tab) TO-126 |
|
| MJE701 | CENTRAL |
获取价格 |
4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington |
|
| MJE701LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
|
| MJE701STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
|
| MJE701T | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor |
|
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