5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MJE700TU2 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti |
|
| MJE700TUA | MOTOROLA |
获取价格 |
暂无描述 |
|
| MJE701 | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor |
|
| MJE701 | FAIRCHILD |
获取价格 |
Monolithic Construction With Built-in Base- Emitter Resistors |
|
| MJE701 | SAMSUNG |
获取价格 |
NPN (HIGH DC CURRENT GAIN) |
|
| MJE701 | NJSEMI |
获取价格 |
Trans Darlington PNP 60V 4A 3-Pin(3+Tab) TO-126 |
|
| MJE701 | CENTRAL |
获取价格 |
4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington |
|
| MJE701LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
|
| MJE701STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
|
| MJE701T | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
