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MJE5851G PDF预览

MJE5851G

更新时间: 2024-11-26 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC局域网
页数 文件大小 规格书
8页 105K
描述
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

MJE5851G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.83Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:350 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):5JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MJE5851G 数据手册

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MJE5850, MJE5851,  
MJE5852  
MJE5851 and MJE5852 are Preferred Devices  
SWITCHMODEt Series  
PNP Silicon Power  
Transistors  
http://onsemi.com  
The MJE5850, MJE5851 and the MJE5852 transistors are designed  
for high−voltage, high−speed, power switching in inductive circuits  
where fall time is critical. They are particularly suited for line operated  
SWITCHMODE applications.  
8 AMPERE  
PCP SILICON  
POWER TRANSISTORS  
300−350−400 VOLTS  
80 WATTS  
Features  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
Deflection Circuits  
Fast Turn−Off Times  
100 ns Inductive Fall Time @ 25_C (Typ)  
125 ns Inductive Crossover Time @ 25°C (Typ)  
Operating Temperature Range 65 to +150_C  
100_C Performance Specified for:  
Reversed Biased SOA with Inductive Loads  
Switching Times with Inductive Loads  
Saturation Voltages  
Leakage Currents  
MARKING  
DIAGRAM  
Pb−Free Packages are Available*  
MJE585xG  
AY WW  
TO−220AB  
CASE 221A−09  
STYLE 1  
1
2
3
MJE585x = Device Code  
x = 0, 1, or 2  
G
= Pb−Free Package  
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
MJE5850/D  

MJE5851G 替代型号

型号 品牌 替代类型 描述 数据表
MJE5851 ONSEMI

完全替代

PNP SILICON POWER TRANSISTORS
MJE5851 MOTOROLA

功能相似

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

与MJE5851G相关器件

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MJE5851L MOTOROLA

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Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851N MOTOROLA

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8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851S MOTOROLA

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Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851T MOTOROLA

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8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851U MOTOROLA

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8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851U2 MOTOROLA

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Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851UA MOTOROLA

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Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851WD MOTOROLA

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Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852 STMICROELECTRONICS

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HIGH VOLTAGE PNP POWER TRANSISTOR
MJE5852 MOTOROLA

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8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS