MJE5851S

更新时间： 2024-11-02 13:11:35

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管
页数	文件大小	规格书
8页	304K
描述
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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技术参数
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MJE5851S 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.74	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	350 V	配置：	SINGLE
最小直流电流增益 (hFE)：	15	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	PNP	功耗环境最大值：	80 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	2500 ns	Base Number Matches：	1

MJE5851S 数据手册

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by MJE5850/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

8 AMPERE

PNP SILICON

POWER TRANSISTORS

300, 350, 400 VOLTS

80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-

age, high–speed, power switching in inductive circuits where fall time is critical. They

are particularly suited for line operated switchmode applications such as:

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Fast Turn–Off Times

100 ns Inductive Fall Time @ 25 C (Typ)

125 ns Inductive Crossover Time @ 25°C (Typ)

Operating Temperature Range –65 to +150 C

100 C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

CASE 221A–06

TO–220AB

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJE5850

300

MJE5851

350

MJE5852

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

CEO(sus)

CEV

350

400

450

6.0

Collector Current — Continuous

Peak (1)

8.0

1 6

Base Current — Continuous

Peak (1)

4.0

8.0

Adc

Total Power Dissipation

Watts

@ T = 25 C

Derate above 25 C

0.640

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7 8

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与MJE5851S相关器件

型号	品牌	获取价格	描述	数据表
MJE5851T	MOTOROLA	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851U	MOTOROLA	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851U2	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851UA	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851WD	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852	STMICROELECTRONICS	获取价格	HIGH VOLTAGE PNP POWER TRANSISTOR
MJE5852	MOTOROLA	获取价格	8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS
MJE5852	ONSEMI	获取价格	PNP SILICON POWER TRANSISTORS
MJE5852	NJSEMI	获取价格	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail
MJE5852_03	STMICROELECTRONICS	获取价格	HIGH VOLTAGE PNP POWER TRANSISTOR

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