MJE5852AJ

更新时间： 2024-11-02 13:00:51

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管
页数	文件大小	规格书
8页	304K
描述
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJE5852AJ 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.73
Is Samacsys：	N	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	8 A	集电极-发射极最大电压：	400 V
配置：	SINGLE	最小直流电流增益 (hFE)：	15
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	PNP
功耗环境最大值：	80 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	最大关闭时间（toff）：	2500 ns
Base Number Matches：	1

MJE5852AJ 数据手册

Order this document

by MJE5850/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

8 AMPERE

PNP SILICON

POWER TRANSISTORS

300, 350, 400 VOLTS

80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-

age, high–speed, power switching in inductive circuits where fall time is critical. They

are particularly suited for line operated switchmode applications such as:

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Fast Turn–Off Times

100 ns Inductive Fall Time @ 25 C (Typ)

125 ns Inductive Crossover Time @ 25°C (Typ)

Operating Temperature Range –65 to +150 C

100 C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

CASE 221A–06

TO–220AB

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJE5850

300

MJE5851

350

MJE5852

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

CEO(sus)

CEV

350

400

450

6.0

Collector Current — Continuous

Peak (1)

8.0

1 6

Base Current — Continuous

Peak (1)

4.0

8.0

Adc

Total Power Dissipation

Watts

@ T = 25 C

Derate above 25 C

0.640

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7 8

中文翻译

下载PDF

与MJE5852AJ相关器件

型号	品牌	获取价格	描述	数据表
MJE5852AN	ONSEMI	获取价格	8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5852AS	ONSEMI	获取价格	暂无描述
MJE5852BA	ONSEMI	获取价格	暂无描述
MJE5852BC	ONSEMI	获取价格	8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5852BD	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BG	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BS	ONSEMI	获取价格	暂无描述
MJE5852BU	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BV	ONSEMI	获取价格	8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5852C	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

与MJE5852AJ相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

7
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

4
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

26
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

25

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE5852AJ

MJE5852AJ 技术参数

MJE5852AJ 数据手册

与MJE5852AJ相关器件

与MJE5852AJ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE5852AJ

MJE5852AJ 技术参数

MJE5852AJ 数据手册

与MJE5852AJ相关器件

与MJE5852AJ相关文章

您还可以找

您在本页遇到什么问题？