MJE5852BD

更新时间： 2024-11-02 13:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管 PC
页数	文件大小	规格书
8页	105K
描述
TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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中文翻译

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技术参数
数据手册

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MJE5852BD 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	PLASTIC, TO-220AB, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.79
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	400 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MJE5852BD 数据手册

MJE5850, MJE5851,

MJE5852

MJE5851 and MJE5852 are Preferred Devices

SWITCHMODEt Series

PNP Silicon Power

Transistors

http://onsemi.com

The MJE5850, MJE5851 and the MJE5852 transistors are designed

for high−voltage, high−speed, power switching in inductive circuits

where fall time is critical. They are particularly suited for line operated

SWITCHMODE applications.

8 AMPERE

PCP SILICON

POWER TRANSISTORS

300−350−400 VOLTS

80 WATTS

Features

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

• Fast Turn−Off Times

♦ 100 ns Inductive Fall Time @ 25_C (Typ)

♦ 125 ns Inductive Crossover Time @ 25°C (Typ)

• Operating Temperature Range −65 to +150_C

• 100_C Performance Specified for:

♦ Reversed Biased SOA with Inductive Loads

♦ Switching Times with Inductive Loads

♦ Saturation Voltages

♦ Leakage Currents

MARKING

DIAGRAM

• Pb−Free Packages are Available*

MJE585xG

AY WW

TO−220AB

CASE 221A−09

STYLE 1

MJE585x = Device Code

x = 0, 1, or 2

= Pb−Free Package

= Assembly Location

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 4

MJE5850/D

12 3 4 5 6 7 8

中文翻译

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与MJE5852BD相关器件

型号	品牌	获取价格	描述	数据表
MJE5852BG	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BS	ONSEMI	获取价格	暂无描述
MJE5852BU	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BV	ONSEMI	获取价格	8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5852C	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852DW	ONSEMI	获取价格	暂无描述
MJE5852G	ONSEMI	获取价格	8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5852L	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852N	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852S	MOTOROLA	获取价格	8A, 400V, PNP, Si, POWER TRANSISTOR, TO-220AB

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