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MJE5852DW PDF预览

MJE5852DW

更新时间: 2024-11-02 13:02:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管PC
页数 文件大小 规格书
8页 105K
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MJE5852DW 数据手册

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MJE5850, MJE5851,  
MJE5852  
MJE5851 and MJE5852 are Preferred Devices  
SWITCHMODEt Series  
PNP Silicon Power  
Transistors  
http://onsemi.com  
The MJE5850, MJE5851 and the MJE5852 transistors are designed  
for high−voltage, high−speed, power switching in inductive circuits  
where fall time is critical. They are particularly suited for line operated  
SWITCHMODE applications.  
8 AMPERE  
PCP SILICON  
POWER TRANSISTORS  
300−350−400 VOLTS  
80 WATTS  
Features  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
Deflection Circuits  
Fast Turn−Off Times  
100 ns Inductive Fall Time @ 25_C (Typ)  
125 ns Inductive Crossover Time @ 25°C (Typ)  
Operating Temperature Range 65 to +150_C  
100_C Performance Specified for:  
Reversed Biased SOA with Inductive Loads  
Switching Times with Inductive Loads  
Saturation Voltages  
Leakage Currents  
MARKING  
DIAGRAM  
Pb−Free Packages are Available*  
MJE585xG  
AY WW  
TO−220AB  
CASE 221A−09  
STYLE 1  
1
2
3
MJE585x = Device Code  
x = 0, 1, or 2  
G
= Pb−Free Package  
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
MJE5850/D  

与MJE5852DW相关器件

型号 品牌 获取价格 描述 数据表
MJE5852G ONSEMI

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8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5852L MOTOROLA

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Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852N MOTOROLA

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Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852S MOTOROLA

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8A, 400V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5852T MOTOROLA

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8A, 400V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5852U MOTOROLA

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8 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5852U2 MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852UA MOTOROLA

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8 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5852W MOTOROLA

获取价格

8 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5852WD MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast