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MJE5852BG PDF预览

MJE5852BG

更新时间： 2024-11-27 10:44:15
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
63页 445K
描述
TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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MJE5852BG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.83
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON

MJE5852BG 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
8 AMPERE  
PNP SILICON  
POWER TRANSISTORS  
300, 350, 400 VOLTS  
80 WATTS  
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-  
age, high–speed, power switching in inductive circuits where fall time is critical. They  
are particularly suited for line operated switchmode applications such as:  
•
•
•
•
•
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
Deflection Circuits  
Fast Turn–Off Times  
100 ns Inductive Fall Time @ 25 C (Typ)  
125 ns Inductive Crossover Time @ 25°C (Typ)  
Operating Temperature Range –65 to +150 C  
100 C Performance Specified for:  
Reversed Biased SOA with Inductive Loads  
Switching Times with Inductive Loads  
Saturation Voltages  
CASE 221A–06  
TO–220AB  
Leakage Currents  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5850  
300  
MJE5851  
350  
MJE5852  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
CEO(sus)  
V
CEV  
350  
400  
450  
V
EB  
6.0  
Collector Current — Continuous  
Peak (1)  
I
C
8.0  
1 6  
I
CM  
Base Current — Continuous  
Peak (1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Power Dissipation  
P
80  
Watts  
D
@ T = 25 C  
C
Derate above 25 C  
0.640  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to 150  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.25  
275  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
R
θJC  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
3–644  
Motorola Bipolar Power Transistor Device Data  
1234567...63

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与MJE5852BG相关器件

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MJE5852BS ONSEMI

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 		暂无描述
MJE5852BU ONSEMI

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 		TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BV ONSEMI

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 		8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5852C MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852DW ONSEMI

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 		暂无描述
MJE5852G ONSEMI

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 		8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5852L MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852N MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852S MOTOROLA

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 		8A, 400V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5852T MOTOROLA

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 		8A, 400V, PNP, Si, POWER TRANSISTOR, TO-220AB

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