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MJE5852AN

更新时间： 2024-11-27 06:54:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
63页 445K
描述
8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE5852AN 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.91
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON

MJE5852AN 数据手册

 浏览型号MJE5852AN的Datasheet PDF文件第2页浏览型号MJE5852AN的Datasheet PDF文件第3页浏览型号MJE5852AN的Datasheet PDF文件第4页浏览型号MJE5852AN的Datasheet PDF文件第5页浏览型号MJE5852AN的Datasheet PDF文件第6页浏览型号MJE5852AN的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
8 AMPERE  
PNP SILICON  
POWER TRANSISTORS  
300, 350, 400 VOLTS  
80 WATTS  
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-  
age, high–speed, power switching in inductive circuits where fall time is critical. They  
are particularly suited for line operated switchmode applications such as:  
•
•
•
•
•
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
Deflection Circuits  
Fast Turn–Off Times  
100 ns Inductive Fall Time @ 25 C (Typ)  
125 ns Inductive Crossover Time @ 25°C (Typ)  
Operating Temperature Range –65 to +150 C  
100 C Performance Specified for:  
Reversed Biased SOA with Inductive Loads  
Switching Times with Inductive Loads  
Saturation Voltages  
CASE 221A–06  
TO–220AB  
Leakage Currents  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5850  
300  
MJE5851  
350  
MJE5852  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
CEO(sus)  
V
CEV  
350  
400  
450  
V
EB  
6.0  
Collector Current — Continuous  
Peak (1)  
I
C
8.0  
1 6  
I
CM  
Base Current — Continuous  
Peak (1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Power Dissipation  
P
80  
Watts  
D
@ T = 25 C  
C
Derate above 25 C  
0.640  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to 150  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.25  
275  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
R
θJC  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
3–644  
Motorola Bipolar Power Transistor Device Data  
1234567...63

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MJE5852AS ONSEMI

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MJE5852BA ONSEMI

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MJE5852BC ONSEMI

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 		8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5852BD ONSEMI

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 		TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BG ONSEMI

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 		TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BS ONSEMI

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MJE5852BU ONSEMI

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 		TRANSISTOR 8 A, 400 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5852BV ONSEMI

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 		8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5852C MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852DW ONSEMI

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