5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率双极晶体管> MJE5851
MJE5851 PDF预览

MJE5851

更新时间： 2024-11-24 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
8页 304K
描述
8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

阅读下载

中文翻译

获取价格

MJE5851 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.3
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：350 V
配置：SINGLE最小直流电流增益 (hFE)：5
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：PNP
功耗环境最大值：80 W最大功率耗散 (Abs)：80 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：2500 ns最大开启时间（吨）：600 ns
VCEsat-Max：5 VBase Number Matches：1

MJE5851 数据手册

 浏览型号MJE5851的Datasheet PDF文件第2页浏览型号MJE5851的Datasheet PDF文件第3页浏览型号MJE5851的Datasheet PDF文件第4页浏览型号MJE5851的Datasheet PDF文件第5页浏览型号MJE5851的Datasheet PDF文件第6页浏览型号MJE5851的Datasheet PDF文件第7页 
Order this document  
by MJE5850/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
8 AMPERE  
PNP SILICON  
POWER TRANSISTORS  
300, 350, 400 VOLTS  
80 WATTS  
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-  
age, high–speed, power switching in inductive circuits where fall time is critical. They  
are particularly suited for line operated switchmode applications such as:  
•
•
•
•
•
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
Deflection Circuits  
Fast Turn–Off Times  
100 ns Inductive Fall Time @ 25 C (Typ)  
125 ns Inductive Crossover Time @ 25°C (Typ)  
Operating Temperature Range –65 to +150 C  
100 C Performance Specified for:  
Reversed Biased SOA with Inductive Loads  
Switching Times with Inductive Loads  
Saturation Voltages  
CASE 221A–06  
TO–220AB  
Leakage Currents  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5850  
300  
MJE5851  
350  
MJE5852  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
CEO(sus)  
V
CEV  
350  
400  
450  
V
EB  
6.0  
Collector Current — Continuous  
Peak (1)  
I
C
8.0  
1 6  
I
CM  
Base Current — Continuous  
Peak (1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Power Dissipation  
P
80  
Watts  
D
@ T = 25 C  
C
Derate above 25 C  
0.640  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to 150  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.25  
275  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
R
θJC  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995
12345678

中文翻译

下载PDF

MJE5851 替代型号

型号 品牌 替代类型 描述 数据表
MJE5851G ONSEMI

功能相似

 8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5851 ONSEMI

功能相似

 PNP SILICON POWER TRANSISTORS

与MJE5851相关器件

型号 品牌 获取价格 描述 数据表
MJE585116 MOTOROLA

获取价格

 		8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE585116A MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851A MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851AF MOTOROLA

获取价格

 		8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851AF ONSEMI

获取价格

 		8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851AJ ONSEMI

获取价格

 		暂无描述
MJE5851AK ONSEMI

获取价格

 		暂无描述
MJE5851AN ONSEMI

获取价格

 		8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851AS ONSEMI

获取价格

 		TRANSISTOR 8 A, 350 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5851AU ONSEMI

获取价格

 		8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

与MJE5851相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证