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MJE5851

更新时间： 2024-11-01 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
8页 304K
描述
8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

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中文翻译

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MJE5851 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.3
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：350 V
配置：SINGLE最小直流电流增益 (hFE)：5
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：PNP
功耗环境最大值：80 W最大功率耗散 (Abs)：80 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：2500 ns最大开启时间（吨）：600 ns
VCEsat-Max：5 VBase Number Matches：1

MJE5851 数据手册

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Order this document  
by MJE5850/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
8 AMPERE  
PNP SILICON  
POWER TRANSISTORS  
300, 350, 400 VOLTS  
80 WATTS  
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-  
age, high–speed, power switching in inductive circuits where fall time is critical. They  
are particularly suited for line operated switchmode applications such as:  
•
•
•
•
•
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
Deflection Circuits  
Fast Turn–Off Times  
100 ns Inductive Fall Time @ 25 C (Typ)  
125 ns Inductive Crossover Time @ 25°C (Typ)  
Operating Temperature Range –65 to +150 C  
100 C Performance Specified for:  
Reversed Biased SOA with Inductive Loads  
Switching Times with Inductive Loads  
Saturation Voltages  
CASE 221A–06  
TO–220AB  
Leakage Currents  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5850  
300  
MJE5851  
350  
MJE5852  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
CEO(sus)  
V
CEV  
350  
400  
450  
V
EB  
6.0  
Collector Current — Continuous  
Peak (1)  
I
C
8.0  
1 6  
I
CM  
Base Current — Continuous  
Peak (1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Power Dissipation  
P
80  
Watts  
D
@ T = 25 C  
C
Derate above 25 C  
0.640  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to 150  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.25  
275  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
R
θJC  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995
12345678

中文翻译

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MJE5851 替代型号

型号 品牌 替代类型 描述 数据表
MJE5851G ONSEMI

功能相似

 8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5851 ONSEMI

功能相似

 PNP SILICON POWER TRANSISTORS

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MJE585116 MOTOROLA

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 		8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE585116A MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851A MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851AF MOTOROLA

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 		8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851AF ONSEMI

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 		8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851AJ ONSEMI

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 		暂无描述
MJE5851AK ONSEMI

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 		暂无描述
MJE5851AN ONSEMI

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 		8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851AS ONSEMI

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 		TRANSISTOR 8 A, 350 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5851AU ONSEMI

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 		8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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