Datasheet > MJE5851AF

MJE5851AF

更新时间： 2024-11-02 18:15:15

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
63页	445K
描述
8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE5851AF 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.8
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	350 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MJE5851AF 数据手册

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

8 AMPERE

PNP SILICON

POWER TRANSISTORS

300, 350, 400 VOLTS

80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-

age, high–speed, power switching in inductive circuits where fall time is critical. They

are particularly suited for line operated switchmode applications such as:

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Fast Turn–Off Times

100 ns Inductive Fall Time @ 25 C (Typ)

125 ns Inductive Crossover Time @ 25°C (Typ)

Operating Temperature Range –65 to +150 C

100 C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

CASE 221A–06

TO–220AB

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJE5850

300

MJE5851

350

MJE5852

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

CEO(sus)

CEV

350

400

450

6.0

Collector Current — Continuous

Peak (1)

8.0

1 6

Base Current — Continuous

Peak (1)

4.0

8.0

Adc

Total Power Dissipation

Watts

@ T = 25 C

Derate above 25 C

0.640

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

3–644

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...63

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与MJE5851AF相关器件

型号	品牌	获取价格	描述	数据表
MJE5851AJ	ONSEMI	获取价格	暂无描述
MJE5851AK	ONSEMI	获取价格	暂无描述
MJE5851AN	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851AS	ONSEMI	获取价格	TRANSISTOR 8 A, 350 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5851AU	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851BA	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851BC	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851BD	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851BG	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851BS	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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