生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.74 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 350 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 15 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 功耗环境最大值: | 80 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 2500 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE5851S | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5851T | MOTOROLA |
获取价格 |
8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
MJE5851U | MOTOROLA |
获取价格 |
8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
MJE5851U2 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5851UA | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5851WD | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5852 | STMICROELECTRONICS |
获取价格 |
HIGH VOLTAGE PNP POWER TRANSISTOR | |
MJE5852 | MOTOROLA |
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8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS | |
MJE5852 | ONSEMI |
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PNP SILICON POWER TRANSISTORS | |
MJE5852 | NJSEMI |
获取价格 |
Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail |