5秒后页面跳转
MJE5851N PDF预览

MJE5851N

更新时间: 2024-11-03 04:50:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 局域网开关晶体管
页数 文件大小 规格书
4页 156K
描述
8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB

MJE5851N 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.74
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP功耗环境最大值:80 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):2500 nsBase Number Matches:1

MJE5851N 数据手册

 浏览型号MJE5851N的Datasheet PDF文件第2页浏览型号MJE5851N的Datasheet PDF文件第3页浏览型号MJE5851N的Datasheet PDF文件第4页 

与MJE5851N相关器件

型号 品牌 获取价格 描述 数据表
MJE5851S MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851T MOTOROLA

获取价格

8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851U MOTOROLA

获取价格

8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851U2 MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851UA MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851WD MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5852 STMICROELECTRONICS

获取价格

HIGH VOLTAGE PNP POWER TRANSISTOR
MJE5852 MOTOROLA

获取价格

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS
MJE5852 ONSEMI

获取价格

PNP SILICON POWER TRANSISTORS
MJE5852 NJSEMI

获取价格

Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail