MJE5851

更新时间： 2024-11-01 22:33:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	304K
描述
PNP SILICON POWER TRANSISTORS

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数据手册
替代型号

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MJE5851 数据手册

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by MJE5850/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

8 AMPERE

PNP SILICON

POWER TRANSISTORS

300, 350, 400 VOLTS

80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-

age, high–speed, power switching in inductive circuits where fall time is critical. They

are particularly suited for line operated switchmode applications such as:

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Fast Turn–Off Times

100 ns Inductive Fall Time @ 25 C (Typ)

125 ns Inductive Crossover Time @ 25°C (Typ)

Operating Temperature Range –65 to +150 C

100 C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

CASE 221A–06

TO–220AB

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJE5850

300

MJE5851

350

MJE5852

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

CEO(sus)

CEV

350

400

450

6.0

Collector Current — Continuous

Peak (1)

8.0

1 6

Base Current — Continuous

Peak (1)

4.0

8.0

Adc

Total Power Dissipation

Watts

@ T = 25 C

Derate above 25 C

0.640

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7 8

中文翻译

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MJE5851 替代型号

型号	品牌	替代类型	描述	数据表
MJE5851G	ONSEMI	完全替代	8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5851	MOTOROLA	功能相似	8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

与MJE5851相关器件

型号	品牌	获取价格	描述	数据表
MJE585116	MOTOROLA	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE585116A	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851A	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851AF	MOTOROLA	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5851AF	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851AJ	ONSEMI	获取价格	暂无描述
MJE5851AK	ONSEMI	获取价格	暂无描述
MJE5851AN	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5851AS	ONSEMI	获取价格	TRANSISTOR 8 A, 350 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5851AU	ONSEMI	获取价格	8A, 350V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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