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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MJE2955TWD | MOTOROLA |
获取价格 |
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB |
|
| MJE2995T | CDIL |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |
|
| MJE2OB3 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE2OBO | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE3055 | MCC |
获取价格 |
NPN Silicon Plastic-Encapsulate Transistor |
|
| MJE3055 | WINNERJOIN |
获取价格 |
TRANSISTOR (NPN) |
|
| MJE3055 | ISC |
获取价格 |
isc Silicon NPN Power Transistor |
|
| MJE3055 | WEITRON |
获取价格 |
Plastic-Encapsulate Power Transistors |
|
| MJE3055 | TRSYS |
获取价格 |
Plastic-Encapsulated Transistors |
|
| MJE3055 | FAIRCHILD |
获取价格 |
General Purpose and Switching Applications |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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