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MJE3055T PDF预览

MJE3055T

更新时间: 2024-11-03 22:33:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 67K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

MJE3055T 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.93Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:179805
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220
Samacsys Released Date:2015-07-22 14:47:00Is Samacsys:N
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:75 W
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):2 MHzVCEsat-Max:8 V
Base Number Matches:1

MJE3055T 数据手册

 浏览型号MJE3055T的Datasheet PDF文件第2页浏览型号MJE3055T的Datasheet PDF文件第3页浏览型号MJE3055T的Datasheet PDF文件第4页 
MJE2955T  
MJE3055T  
COMPLEMENTARY SILICON POWER TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
DESCRIPTION  
The MJE3055T is a silicon epitaxial-base NPN  
transistor in Jedec TO-220 package. It is  
intended for power switching circuits and  
general-purpose amplifiers. The complementary  
PNP type is MJE2955T.  
3
2
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (IB = 0)  
Collector-Base Voltage (IE = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
60  
V
V
70  
5
V
10  
A
IB  
Base Current  
6
75  
A
o
Ptot  
Total Power Dissipation at Tcase 25 C  
Storage Temperature  
W
oC  
oC  
Tstg  
Tj  
-55 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/4  
June 1997  

MJE3055T 替代型号

型号 品牌 替代类型 描述 数据表
BD910 STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055TG ONSEMI

功能相似

Complementary Silicon Plastic Power Transistors
2N4922G ONSEMI

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Medium−Power Plastic NPN Silicon Transistors

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