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2N4922G PDF预览

2N4922G

更新时间: 2024-11-04 03:56:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 91K
描述
Medium−Power Plastic NPN Silicon Transistors

2N4922G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.71
最大集电极电流 (IC):3 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-225JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

2N4922G 数据手册

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2N4921, 2N4922, 2N4923  
2N4923 is a Preferred Device  
Medium−Power Plastic  
NPN Silicon Transistors  
These high−performance plastic devices are designed for driver  
circuits, switching, and amplifier applications.  
Features  
http://onsemi.com  
Low Saturation Voltage − V  
= 0.6 Vdc (Max) @ I = 1.0 A  
C
CE(sat)  
1.0 AMPERE  
Excellent Power Dissipation Due to Thermopad Construction −  
P = 30 W @ T = 25_C  
D
C
GENERAL PURPOSE  
POWER TRANSISTORS  
40−80 VOLTS, 30 WATTS  
Excellent Safe Operating Area  
Gain Specified to I = 1.0 A  
C
Complement to PNP 2N4918, 2N4919, 2N4920  
Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
2N4921  
2N4922  
2N4923  
V
40  
60  
80  
Vdc  
CEO  
TO−225  
CASE 77  
STYLE 1  
Collector−Emitter Voltage  
Emitter Base Voltage  
2N4921  
2N4922  
2N4923  
V
40  
60  
80  
Vdc  
CB  
EB  
3
2
1
V
5.0  
Vdc  
Adc  
MARKING DIAGRAM  
Collector Current − Continuous (Note 1)  
I
1.0  
3.0  
C
Base Current − Continuous  
I
1.0  
Adc  
B
1
Total Power Dissipation @ T = 25_C  
P
30  
0.24  
W
C
D
YWW  
2
N492xG  
Derate above 25_C  
mW/_C  
_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
stg  
THERMAL CHARACTERISTICS (Note 2)  
Y
= Year  
Characteristic  
Symbol  
Max  
Unit  
WW  
= Work Week  
Thermal Resistance, Junction−to−Case  
q
4.16  
_C/W  
JC  
2N492x = Device Code  
x = 1, 2, or 3  
G
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
= Pb−Free Package  
ORDERING INFORMATION  
1. The 1.0 A maximum I value is based upon JEDEC current gain requirements.  
C
Device  
Package  
Shipping  
The 3.0 A maximum value is based upon actual current handling capability of  
the device (see Figures 5 and 6).  
2. Recommend use of thermal compound for lowest thermal resistance.  
2N4921  
TO−225  
500 Units / Box  
500 Units / Box  
2N4921G  
TO−225  
(Pb−Free)  
*Indicates JEDEC Registered Data.  
2N4922  
TO−225  
500 Units / Box  
500 Units / Box  
2N4922G  
TO−225  
(Pb−Free)  
2N4923  
TO−225  
500 Units / Box  
500 Units / Box  
2N4923G  
TO−225  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 11  
2N4921/D  
 

2N4922G 替代型号

型号 品牌 替代类型 描述 数据表
MJE3055TG ONSEMI

类似代替

Complementary Silicon Plastic Power Transistors
2N4922 ONSEMI

类似代替

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
MJE15030G ONSEMI

功能相似

8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

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