Datasheet > 2N4923

2N4923

更新时间： 2024-11-25 22:49:23

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2页	45K
描述
NPN SILICON EPITAXIAL TRANSISTOR

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数据手册

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2N4923 数据手册

NPN SILICON EPITAXIAL TRANSISTOR

2N4923

TO-126

Boca Semiconductor Corp.

BSC

http://www.bocasemi.com

General Purpose Power Transistor

ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

DESCRIPTION

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Base Current

VCBO

VCEO

VEBO

5.0

3.0

1.0

Power Dissipation @ Tc=25 deg C

Derate Above 25 deg C

Operating And Storage Junction

Temperature Range

0.24

-65 to +150

W/deg C

deg C

Tj, Tstg

Lead Temperature for Soldering 1/16" TL

from Body for 10 Seconds.

260

deg C

Thermal Resistance

Junction to Case

Rth (j-c)

4.16

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

Collector -Emitter Sustaining Voltage

Collector Cut off Current

SYMBOL

VCEO(sus) IC=100mA, IB=0

ICEO

ICBO

ICEX

TEST CONDITION

MIN TYP MAX

UNIT

VCE=40V, IB=0

VCB=80V, IE=0

VCB=80V,VEB(0ff)=1.5V

Tc=125 deg C

0.5

0.1

VCB=80V,VEB(0ff)=1.5V

VEB=5V, IC=0

IC=50mA,VCE=1V

IC=500mA,VCE=1V

IC=1A,VCE=1V

IC=1A, IB=0.1A

IC=1A,VCE=1V

0.5

1.0

150

0.6

1.3

Emitter Cut off Current

DC Current Gain

IEBO

hFE *

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Base Emitter on Voltage

VCE(sat)*

VBE(sat)*

VBE(on) *

DYNAMIC CHARACTERISTICS

Transistors frequency

Output Capacitance

Cob

hfe

IC=250mA,VCE=10V,f=1MHz

VCB=10V, IE=0, f=100kHz

IC=250mA,VCE=10V,f=1kHz

3.0

100

MHz

Small Signal Current Gain

*Pulse Test PW=300us, Duty Cycle=2%

Continental Device India Limited

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Data Sheet

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