MJE3055TDW

更新时间： 2024-09-29 13:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	132K
描述
10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE3055TDW 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	PLASTIC, TO-220AB, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.7
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	2 MHz
Base Number Matches：	1

MJE3055TDW 数据手册

Order this document

by MJE2955T/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general–purpose amplifier and switching applications.

*Motorola Preferred Device

•

DC Current Gain Specified to 10 Amperes

High Current Gain — Bandwidth Product —

10 AMPERE

COMPLEMENTARY

SILICON

= 2.0 MHz (Min) @ I = 500 mAdc

POWER TRANSISTORS

60 VOLTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

75 WATTS

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

Vdc

5.0

Vdc

Adc

Base Current

6.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

P †

Watts

0.6

W/ C

MJE3055T, MJE2955T

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.67

C/W

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

7.0

100 µs

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

1.0 ms

5.0 ms

5.0

down. Safe operating area curves indicate I – V

limits of

3.0

2.0

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

1.0

0.7

The data of Figure 1 is based on T

= 150 C. T is vari-

J(pk)

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided T 150 C.

= 150°C

0.5

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

J(pk)

0.3

0.2

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown. (See AN415A)

= 25°C (D = 0.1)

0.1

5.0

7.0

50 60

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Active–Region Safe Operating Area

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

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与MJE3055TDW相关器件

型号	品牌	获取价格	描述	数据表
MJE3055TG	ONSEMI	获取价格	Complementary Silicon Plastic Power Transistors
MJE3055TG-TA3-T	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE3055TG-TM3-T	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE3055TG-TN3-R	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE3055TL	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE3055TLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE3055TL-TA3-T	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE3055TL-TM3-	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE3055TL-TM3-T	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE3055TL-TN3-R	UTC	获取价格	HIGH VOLTAGE TRANSISTOR

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