Datasheet > BD910

BD910

更新时间： 2024-09-24 22:27:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
6页	100K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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中文翻译

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数据手册
替代型号

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BD910 数据手册

BD909/911

BD910/912

COMPLEMENTARY SILICON POWER TRANSISTORS

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STMicroelectronics PREFERRED

SALESTYPES

DESCRIPTION

The BD909 and BD911 are silicon Epitaxial-Base

NPN power transistors mounted in Jedec TO-220

plastic package. They are intented for use in

power linear and switching applications.

The complementary PNP types are BD910 and

BD912 respectively.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

PNP

BD909

BD910

BD911

BD912

100

V_CBO

V_CEO

V_EBO

I_E,I_C

I_B

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

100

Base Current

P_tot

T_stg

T_j

^oC

Total Dissipation at T_c25 C

≤

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

For PNP types voltage and current values are negative.

1/6

October 1999

12 3 4 5 6

中文翻译

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BD910 替代型号

型号	品牌	替代类型	描述	数据表
MJE3055T	STMICROELECTRONICS	类似代替	COMPLEMENTARY SILICON POWER TRANSISTORS
2N6491G	ONSEMI	功能相似	15 AMPERE COMPLEMENTARY SILICON POWER TRANSIS
2N4922G	ONSEMI	功能相似	Medium−Power Plastic NPN Silicon Transistors

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