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BD910_15 PDF预览

BD910_15

更新时间: 2024-11-05 01:20:19
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
5页 98K
描述
Silicon PNP Power Transistors

BD910_15 数据手册

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Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD910 BD912  
DESCRIPTION  
·
·With TO-220C package  
·Complement to type BD909 BD911  
APPLICATIONS  
·Intented for use in power linear  
and switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
BD910  
BD912  
BD910  
BD912  
-80  
VCBO  
Collector-base voltage  
Open emitter  
V
-100  
-80  
VCEO  
Collector-emitter voltage  
Open base  
V
-100  
-5  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
-15  
IB  
Base current  
-5  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC25℃  
90  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
MAX  
UNIT  
Rth j-c  
1.4  
/W  
f

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