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2N6491G PDF预览

2N6491G

更新时间: 2024-11-04 12:52:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 148K
描述
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 75 WATTS

2N6491G 数据手册

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2N6487, 2N6488, (NPN)  
2N6490, 2N6491 (PNP)  
Complementary Silicon  
Plastic Power Transistors  
These devices are designed for use in generalpurpose amplifier and  
switching applications.  
http://onsemi.com  
Features  
15 AMPERE  
DC Current Gain Specified to 15 Amperes −  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
6080 VOLTS, 75 WATTS  
h
= 20150 @ I = 5.0 Adc  
FE  
C
= 5.0 (Min) @ I = 15 Adc  
C
CollectorEmitter Sustaining Voltage −  
V
= 60 Vdc (Min) 2N6487, 2N6490  
= 80 Vdc (Min) 2N6488, 2N6491  
CEO(sus)  
MARKING  
DIAGRAM  
High Current Gain Bandwidth Product  
f = 5.0 MHz (Min) @ I = 1.0 Adc  
T
C
TO220AB Compact Package  
PbFree Packages are Available*  
4
MAXIMUM RATINGS (Note 1)  
Rating  
TO220AB  
CASE 221A  
STYLE 1  
2N64xxG  
AYWW  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
CEO  
Vdc  
2N6487, 2N6490  
2N6488, 2N6491  
60  
80  
1
2
CollectorBase Voltage  
EmitterBase Voltage  
V
Vdc  
CB  
EB  
3
2N6487, 2N6490  
2N6488, 2N6491  
70  
90  
2N64xx = Specific Device Code  
xx  
G
A
Y
WW  
= See Table on Page 5  
= PbFree Package  
= Assembly Location  
= Year  
V
5.0  
15  
Vdc  
Adc  
Adc  
Collector Current Continuous  
I
C
Base Current  
I
B
5.0  
= Work Week  
Total Power Dissipation @ T = 25_C  
P
D
75  
0.6  
W
W/°C  
C
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
1.8  
0.014  
W
W/°C  
A
Derate above 25_C  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 5 of this data sheet.  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
1.67  
70  
Unit  
_C/W  
_C/W  
Thermal Resistance, JunctiontoCase  
Thermal Resistance, JunctiontoAmbient  
R
q
JC  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 Rev. 14  
2N6487/D  
 

2N6491G 替代型号

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