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2N6491G PDF预览

2N6491G

更新时间： 2024-12-01 12:52:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 148K
描述
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 75 WATTS

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中文翻译

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2N6491G 数据手册

 浏览型号2N6491G的Datasheet PDF文件第2页浏览型号2N6491G的Datasheet PDF文件第3页浏览型号2N6491G的Datasheet PDF文件第4页浏览型号2N6491G的Datasheet PDF文件第5页浏览型号2N6491G的Datasheet PDF文件第6页 
2N6487, 2N6488, (NPN)  
2N6490, 2N6491 (PNP)  
Complementary Silicon  
Plastic Power Transistors  
These devices are designed for use in general−purpose amplifier and  
switching applications.  
http://onsemi.com  
Features  
15 AMPERE  
• DC Current Gain Specified to 15 Amperes −  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60−80 VOLTS, 75 WATTS  
h
= 20−150 @ I = 5.0 Adc  
FE  
C
= 5.0 (Min) @ I = 15 Adc  
C
• Collector−Emitter Sustaining Voltage −  
V
= 60 Vdc (Min) − 2N6487, 2N6490  
= 80 Vdc (Min) − 2N6488, 2N6491  
CEO(sus)  
MARKING  
DIAGRAM  
• High Current Gain − Bandwidth Product  
f = 5.0 MHz (Min) @ I = 1.0 Adc  
T
C
• TO−220AB Compact Package  
• Pb−Free Packages are Available*  
4
MAXIMUM RATINGS (Note 1)  
Rating  
TO−220AB  
CASE 221A  
STYLE 1  
2N64xxG  
AYWW  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
V
CEO  
Vdc  
2N6487, 2N6490  
2N6488, 2N6491  
60  
80  
1
2
Collector−Base Voltage  
Emitter−Base Voltage  
V
Vdc  
CB  
EB  
3
2N6487, 2N6490  
2N6488, 2N6491  
70  
90  
2N64xx = Specific Device Code  
xx  
G
A
Y
WW  
= See Table on Page 5  
= Pb−Free Package  
= Assembly Location  
= Year  
V
5.0  
15  
Vdc  
Adc  
Adc  
Collector Current − Continuous  
I
C
Base Current  
I
B
5.0  
= Work Week  
Total Power Dissipation @ T = 25_C  
P
D
75  
0.6  
W
W/°C  
C
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
1.8  
0.014  
W
W/°C  
A
Derate above 25_C  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 5 of this data sheet.  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
1.67  
70  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 − Rev. 14  
2N6487/D  
 
123456

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2N6491G 替代型号

型号 品牌 替代类型 描述 数据表
MJE3055TG ONSEMI

类似代替

 Complementary Silicon Plastic Power Transistors
MJE15030G ONSEMI

类似代替

 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
2N6491 ONSEMI

类似代替

 Complementary Silicon Plastic Power Transistors

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