Datasheet > 2N6493

2N6493

更新时间： 2024-12-01 06:18:11

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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中文翻译

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2N6493 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6493

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·High DC current gain

·DARLINGTON

APPLICATIONS

·General-purpose power amplifier and

low frequency swithing applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

100

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

P_D

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

100

ꢀ

T_j

150

T_stg

-65~200

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.75

ꢀ/W

12 3

中文翻译

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2N6494	NJSEMI	获取价格	Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220
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2N6495	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL
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2N6496	SAVANTIC	获取价格	Silicon NPN Power Transistors
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