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2N6495 PDF预览

2N6495

更新时间: 2024-11-04 06:18:11
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页数 文件大小 规格书
3页 113K
描述
Silicon NPN Power Transistors

2N6495 数据手册

 浏览型号2N6495的Datasheet PDF文件第2页浏览型号2N6495的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6495  
DESCRIPTION  
·With TO-66 package  
·Low collector saturation voltage  
·Excellent safe operating area  
APPLICATIONS  
·Designed for switching and wide-  
band amplifier applications  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
150  
80  
UNIT  
V
Open base  
V
Open collector  
7
V
10  
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
70  
W
Tj  
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction to case  
4.37  
/W  

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