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2N6497 PDF预览

2N6497

更新时间: 2024-12-01 06:26:19
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 93K
描述
Silicon NPN Power Transistors

2N6497 数据手册

 浏览型号2N6497的Datasheet PDF文件第2页浏览型号2N6497的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6497  
DESCRIPTION  
·With TO-220C package  
·High breakdown voltage  
APPLICATIONS  
·Designed for high voltage inverters,  
switching regulators and line operated  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Base current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
350  
V
V
V
A
A
A
W
Open base  
250  
Open collector  
6
5
10  
ICM  
IB  
2
PD  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
80  
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
1.56  
/W  

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