Datasheet > 2N6492

2N6492

更新时间： 2024-11-04 07:29:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
Silicon NPN Power Transistors

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中文翻译

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2N6492 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6492

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·High DC current gain

·DARLINGTON

APPLICATIONS

·General-purpose power amplifier and

low frequency swithing applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

P_D

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

100

150

-65~200

℃

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.75

℃/W

12 3

中文翻译

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与2N6492相关器件

型号	品牌	获取价格	描述	数据表
2N6493	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N6493	ISC	获取价格	Silicon NPN Power Transistors
2N6493	NJSEMI	获取价格	Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220
2N6494	ISC	获取价格	Silicon NPN Power Transistors
2N6494	BOCA	获取价格	PNP SILICON POWER TRANSISTOR
2N6494	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N6494	NJSEMI	获取价格	Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220
2N6495	ISC	获取价格	Silicon NPN Power Transistors
2N6495	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N6495	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL