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MJE3055TAS

更新时间： 2024-11-04 17:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
59页 357K
描述
TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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MJE3055TAS 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.36
外壳连接：COLLECTOR最大集电极电流 (IC)：10 A
集电极-发射极最大电压：60 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：2 MHz
Base Number Matches：1

MJE3055TAS 数据手册

 浏览型号MJE3055TAS的Datasheet PDF文件第2页浏览型号MJE3055TAS的Datasheet PDF文件第3页浏览型号MJE3055TAS的Datasheet PDF文件第4页浏览型号MJE3055TAS的Datasheet PDF文件第5页浏览型号MJE3055TAS的Datasheet PDF文件第6页浏览型号MJE3055TAS的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general–purpose amplifier and switching applications.  
*Motorola Preferred Device  
•
•
DC Current Gain Specified to 10 Amperes  
High Current Gain — Bandwidth Product —  
10 AMPERE  
COMPLEMENTARY  
SILICON  
f
T
= 2.0 MHz (Min) @ I = 500 mAdc  
C
POWER TRANSISTORS  
60 VOLTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
75 WATTS  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
V
CB  
70  
Vdc  
V
EB  
5.0  
10  
Vdc  
I
C
Adc  
Base Current  
I
6.0  
75  
Adc  
B
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P †  
D
Watts  
0.6  
W/ C  
C
MJE3055T, MJE2955T  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
J
stg  
CASE 221A–06  
TO–220AB  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
1.67  
C/W  
JC  
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.  
10  
7.0  
100 µs  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
1.0 ms  
5.0 ms  
5.0  
dc  
down. Safe operating area curves indicate I – V  
limits of  
C
CE  
3.0  
2.0  
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
1.0  
0.7  
0.5  
The data of Figure 1 is based on T  
= 150 C. T is vari-  
C
J(pk)  
able depending on conditions. Second breakdown pulse lim-  
its are valid for duty cycles to 10% provided T 150 C.  
T = 150°C  
J
SECOND BREAKDOWN LIMITED  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
J(pk)  
0.3  
0.2  
At high case temperatures, thermal limitations will reduce the  
power that can be handled to values less than the limitations  
imposed by second breakdown. (See AN415A)  
T = 25°C (D = 0.1)  
C
0.1  
5.0  
7.0  
10  
20  
30  
50 60  
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 1. Active–Region Safe Operating Area  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
3–628  
Motorola Bipolar Power Transistor Device Data  
1234567...59

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