MJE3055T

更新时间： 2024-09-28 22:33:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
4页	132K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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MJE3055T 数据手册

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by MJE2955T/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general–purpose amplifier and switching applications.

*Motorola Preferred Device

•

DC Current Gain Specified to 10 Amperes

High Current Gain — Bandwidth Product —

10 AMPERE

COMPLEMENTARY

SILICON

= 2.0 MHz (Min) @ I = 500 mAdc

POWER TRANSISTORS

60 VOLTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

75 WATTS

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

Vdc

5.0

Vdc

Adc

Base Current

6.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

P †

Watts

0.6

W/ C

MJE3055T, MJE2955T

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.67

C/W

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

7.0

100 µs

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

1.0 ms

5.0 ms

5.0

down. Safe operating area curves indicate I – V

limits of

3.0

2.0

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

1.0

0.7

The data of Figure 1 is based on T

= 150 C. T is vari-

J(pk)

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided T 150 C.

= 150°C

0.5

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

J(pk)

0.3

0.2

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown. (See AN415A)

= 25°C (D = 0.1)

0.1

5.0

7.0

50 60

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Active–Region Safe Operating Area

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

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MJE3055T 替代型号

型号	品牌	替代类型	描述	数据表
MJE3055TG	ONSEMI	类似代替	Complementary Silicon Plastic Power Transistors
MJE15030G	ONSEMI	功能相似	8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

与MJE3055T相关器件

型号	品牌	获取价格	描述	数据表
MJE3055T_09	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE3055T_15	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE3055T16	MOTOROLA	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE3055T16A	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE3055TAF	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE3055TAJ	ONSEMI	获取价格	TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE3055TAN	ONSEMI	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE3055TAS	ONSEMI	获取价格	TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE3055TBA	ONSEMI	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE3055TBD	ONSEMI	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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