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MJE3055T

更新时间: 2024-02-05 08:38:16
品牌 Logo 应用领域
永盛 - Wing Shing 晶体晶体管开关局域网
页数 文件大小 规格书
1页 68K
描述
SILICON EPITAXIAL PLANAR TRANSISTOR

MJE3055T 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.63Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:75 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MJE3055T 数据手册

  
SILICON EPITAXIAL  
MJE3055T/MJE2955T  
PLANAR TRANSISTOR  
GENERAL DESCRIPTION  
Complementary, high power transistors in a plastic  
envelope, primarily for use in audio and general  
purpose  
TO-220  
QUICK REFERENCE DATA  
SYMBOL  
VCBO  
VCEO  
IC  
PARAMETER  
CONDITIONS  
MIN  
MAX  
70  
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
-
60  
V
10  
A
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Diode forward voltage  
A
ICM  
Ptot  
VCEsat  
VF  
tf  
-
-
-
1.5  
Tmb 25  
75  
1.2  
2.0  
-
W
V
IC = 4.0A; IB = 0.4A  
IF = 4.0A  
V
Fall time  
s
LIMITING VALUES  
SYMBOL  
VCESM  
VCEO  
VEBO  
IC  
PARAMETER  
CONDITIONS  
MIN  
MAX  
70  
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Emitter-base oltage (open colloctor)  
Collector current (DC)  
VBE = 0V  
-
-
60  
V
5
v
-
10  
A
Base current (DC)  
-
-
6
A
IB  
Ptot  
Total power dissipation  
Tmb 25  
75  
W
Storage temperature  
-55  
-
150  
150  
Tstg  
Tj  
Junction temperature  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VCB=70V  
MIN  
MAX  
1.0  
UNIT  
mA  
mA  
v
Collector-base cut-off current  
Emitter-base cut-off current  
Collector-emitter breakdown voltage  
Collector-emitter saturation voltages  
DC current gain  
-
-
ICBO  
IEBO  
V(BR)CEO  
VCEsat  
hFE  
fT  
VEB=5V  
2.5  
IC=1mA  
60  
-
IC = 4.0A; IB = 0.4A  
IC = 4.0A; VCE = 4V  
IC = 0.5A; VCE = 10V  
VCB = 10V  
1.2  
100  
-
V
20  
5
Transition frequency at f = 5MHz  
Collector capacitance at f = 1MHz  
On times  
MHz  
pF  
us  
350  
Cc  
ton  
Tum-off storage time  
us  
ts  
Fall time  
us  
tf  
Wing Shing Computer Components Co., (H.K.)Ltd.  
Homepage: http://www.wingshing.com  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com  

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