MJE3055

更新时间： 2024-09-26 22:33:07

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安森美 - ONSEMI		晶体晶体管
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描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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MJE3055 数据手册

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by MJE2955T/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general–purpose amplifier and switching applications.

*Motorola Preferred Device

•

DC Current Gain Specified to 10 Amperes

High Current Gain — Bandwidth Product —

10 AMPERE

COMPLEMENTARY

SILICON

= 2.0 MHz (Min) @ I = 500 mAdc

POWER TRANSISTORS

60 VOLTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

75 WATTS

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

Vdc

5.0

Vdc

Adc

Base Current

6.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

P †

Watts

0.6

W/ C

MJE3055T, MJE2955T

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.67

C/W

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

7.0

100 µs

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

1.0 ms

5.0 ms

5.0

down. Safe operating area curves indicate I – V

limits of

3.0

2.0

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

1.0

0.7

The data of Figure 1 is based on T

= 150 C. T is vari-

J(pk)

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided T 150 C.

= 150°C

0.5

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

J(pk)

0.3

0.2

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown. (See AN415A)

= 25°C (D = 0.1)

0.1

5.0

7.0

50 60

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Active–Region Safe Operating Area

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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