5秒后页面跳转
MJE3055T PDF预览

MJE3055T

更新时间: 2024-02-02 22:18:48
品牌 Logo 应用领域
SAVANTIC 晶体晶体管开关局域网
页数 文件大小 规格书
4页 121K
描述
Silicon NPN Power Transistors

MJE3055T 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.63Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:75 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MJE3055T 数据手册

 浏览型号MJE3055T的Datasheet PDF文件第2页浏览型号MJE3055T的Datasheet PDF文件第3页浏览型号MJE3055T的Datasheet PDF文件第4页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE3055T  
DESCRIPTION  
·With TO-220 package  
·Complement to type MJE2955T  
·DC current gain -hFE = 20–70 @ IC = 4 Adc  
·Collector–emitter saturation voltage -  
V
CE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc  
APPLICATIONS  
·Designed for general–purpose  
switching and amplifier applications.  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
Collector  
Emitter  
3
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
70  
Open base  
60  
V
Open collector  
5
10  
V
A
IB  
Base current  
6
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
75  
W
150  
-55~150  
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.67  
/W  
Rth j-c  

与MJE3055T相关器件

型号 品牌 获取价格 描述 数据表
MJE3055T_09 UTC

获取价格

HIGH VOLTAGE TRANSISTOR
MJE3055T_15 UTC

获取价格

HIGH VOLTAGE TRANSISTOR
MJE3055T16 MOTOROLA

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE3055T16A MOTOROLA

获取价格

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE3055TAF MOTOROLA

获取价格

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE3055TAJ ONSEMI

获取价格

TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE3055TAN ONSEMI

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE3055TAS ONSEMI

获取价格

TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE3055TBA ONSEMI

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE3055TBD ONSEMI

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN