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MJE3055

更新时间： 2024-09-27 12:10:31
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 246K
描述
NPN Silicon Plastic-Encapsulate Transistor

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中文翻译

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MJE3055 数据手册

 浏览型号MJE3055的Datasheet PDF文件第2页浏览型号MJE3055的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MJE3055  
Micro Commercial Components  
Features  
NPN Silicon  
Plastic-Encapsulate  
Transistor  
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
•
•
•
•
·
Capable of 2.0Watts of Power Dissipation.  
Collector-current 10A  
Collector-base Voltage 70V  
Operating and storage junction temperature range: -55OC to +150OC  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
TO-220  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
C
B
Symbol  
Parameter  
Min  
Max  
Units  
S
F
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-Emitter Breakdown Voltage  
60  
70  
5
Vdc  
Q
(I =200mAdc, IB=0)  
C
T
Collector-Base Breakdown Voltage  
Vdc  
A
(I =1000uAdc, IE=0)  
C
U
Emitter-Base Breakdown Voltage  
Vdc  
(I =1000uAdc, IC=0)  
E
1
2
3
I
Collector Cutoff Current  
(VCB=70Vdc, IE=0)  
Emitter Cutoff Current  
(VEB=5.0Vdc, IC=0)  
1000  
uAdc  
uAdc  
CBO  
H
IEBO  
5000  
K
V
ON CHARACTERISTICS  
L
J
D
hFE(1)  
DC Current Gain  
R
G
(I =4.0Adc, VCE=4.0Vdc)  
DC Current Gain  
(I =10Adc, VCE=4Vdc)  
C
20  
100  
C
PIN 1.  
PIN 2.  
PIN 3.  
BASE  
COLLECTOR  
EMITTER  
N
hFE(2)  
5.0  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(I =4Adc, IB=0.4Adc)  
C
DIMENSIONS  
INCHES  
MM  
1.1  
Vdc  
Vdc  
MIN  
14.22  
9.65  
MAX  
15.88  
10.67  
NOTE  
DIM  
MIN  
.560  
MAX  
.625  
A
B
C
(I =10Adc, IB=3.3Adc)  
C
1.2  
.380  
.140  
.420  
.190  
3.56  
4.82  
VBE  
Base-Emitter Voltage  
(I =4Adc,VCE=4V  
C
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
1.8  
Vdc  
G
H
J
SMALL-SIGNAL CHARACTERISTICS  
fT  
Trans istor Frequency  
.012  
0.30  
(I =0.5Adc, VCE=10Vdc, f=1.0MHz)  
C
2.0  
MHz  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
N
.190  
.210  
4.83  
5.33  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
.045  
1.15  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  
123

中文翻译

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