Datasheet > MJE3055

MJE3055

更新时间： 2024-09-27 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	125K
描述
TRANSISTOR (NPN)

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MJE3055 数据手册

RoHS

MJE3055

MJE3055 TRANSISTOR (NPN)

TO-220

1. BASE

FEATURES

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM:

W (Tamb=25℃)

Collector current

I_CM:

1 2 3

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=1mA, I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=200mA, I_B=0

I_E=1mA, I_C=0

_CB=70V, I_E=0

_CE=30V, I_E=0

0.7

I_CEO

Collector cut-off current

I_EBO

Emitter cut-off current

V_EB=5V, I_C=0

h_FE(1)

_CE=4V, I_C=4A

100

DC current gain

h_FE(2)

V_CE=4V, I_C=10A

I_C=4A, I_B=400mA

I_C=10A, I_B=3.3A

1.1

V_CE(sat)

Collector-emitter saturation voltage

V_BE

Base-emitter voltage

Transition frequency

_CE=4V, I_C=4A

1.8

MHz

f_T

V_CE=10V, I_C=500mA

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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