Datasheet > MJE3055

MJE3055

更新时间： 2024-11-25 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	91K
描述
isc Silicon NPN Power Transistor

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MJE3055 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE3055

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 60V(Min)

·High DC Current Gain-

: h_FE= 20-100@I_C= 4A

·Complement to Type MJE2955

APPLICATIONS

·Designed for use in general-purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.39

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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