5秒后页面跳转
MJE3055 PDF预览

MJE3055

更新时间: 2024-09-26 22:33:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 40K
描述
General Purpose and Switching Applications

MJE3055 数据手册

 浏览型号MJE3055的Datasheet PDF文件第2页浏览型号MJE3055的Datasheet PDF文件第3页浏览型号MJE3055的Datasheet PDF文件第4页 
MJE3055T  
General Purpose and Switching Applications  
DC Current Gain Specified to I =10A  
High Current Gain-Bandwidth Product : f = 2MHz (Min.)  
C
T
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector -Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
70  
V
V
CBO  
CEO  
EBO  
60  
5
V
I
10  
A
C
I
Base Current  
6
75  
A
B
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
C
P
T
T
Collector Dissipation (T =25°C)  
0.6  
C
a
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
BV  
I
= 200mA, I = 0  
60  
CEO  
CEO  
C
B
I
V
= 30V, I = 0  
700  
µA  
CE  
B
I
I
Collector Cut-off Current  
V
V
= 70V, V (off) = -1.5V  
1
5
mA  
mA  
CEX1  
CEX2  
CE  
CE  
BE  
= 70V, V (off) = -1.5V  
BE  
@ T = 150°C  
C
I
Emitter Cut-off Current  
*DC Current Gain  
V
= 5V, I = 0  
5
mA  
EBO  
EB  
C
h
V
V
= 4V, I = 4A  
20  
5
100  
FE  
CE  
CE  
C
= 4V, I = 10A  
C
V
(sat)  
(on)  
*Collector-Emitter Saturation Voltage  
I
I
= 4A, I = 0.4A  
1.1  
8
V
V
CE  
BE  
C
C
B
= 10A, I = 3.3A  
B
V
*Base-Emitter On Voltage  
V
V
= 4V, I = 4A  
1.8  
V
CE  
CE  
C
f
Current Gain Bandwidth Product  
= 10V, I = 500mA  
2
MHz  
T
C
* Pulse test: PW300µs, duty cycle2% Pulse  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  

与MJE3055相关器件

型号 品牌 获取价格 描述 数据表
MJE3055-BP MCC

获取价格

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE3055-BP-HF MCC

获取价格

Power Bipolar Transistor,
MJE3055T DCCOM

获取价格

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
MJE3055T SAVANTIC

获取价格

Silicon NPN Power Transistors
MJE3055T ISC

获取价格

isc Silicon NPN Power Transistor
MJE3055T Wing Shing

获取价格

SILICON EPITAXIAL PLANAR TRANSISTOR
MJE3055T SAMSUNG

获取价格

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)
MJE3055T FAIRCHILD

获取价格

General Purpose and Switching Applications
MJE3055T STMICROELECTRONICS

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055T MOTOROLA

获取价格

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS