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MJE243G PDF预览

MJE243G

更新时间: 2024-11-02 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 90K
描述
Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

MJE243G 数据手册

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MJE243 − NPN,  
MJE253 − PNP  
Preferred Device  
Complementary Silicon  
Power Plastic Transistors  
These devices are designed for low power audio amplifier and  
low−current, high−speed switching applications.  
http://onsemi.com  
Features  
4.0 AMPERES  
High Collector−Emitter Sustaining Voltage −  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
100 VOLTS, 15 WATTS  
V
= 100 Vdc (Min)  
CEO(sus)  
High DC Current Gain @ I = 200 mAdc  
C
h
= 40−200  
= 40−120  
FE  
Low Collector−Emitter Saturation Voltage −  
= 0.3 Vdc (Max) @ I = 500 mAdc  
V
CE(sat)  
C
High Current Gain Bandwidth Product −  
f = 40 MHz (Min) @ I = 100 mAdc  
T
C
Annular Construction for Low Leakages  
= 100 nAdc (Max) @ Rated V  
Pb−Free Packages are Available*  
TO−225  
CASE 77  
STYLE 1  
I
CBO  
CB  
3
2
1
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
MARKING DIAGRAM  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
100  
CB  
EB  
V
7.0  
YWW  
JE2x3G  
Collector Current − Continuous  
− Peak  
I
4.0  
8.0  
C
Base Current  
I
10  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
P
15  
0.12  
W
C
D
D
Derate above 25_C  
mW/_C  
W
mW/_C  
_C  
Y
WW  
= Year  
= Work Week  
Total Power Dissipation @ T = 25_C  
1.5  
0.012  
C
Derate above 25_C  
JE2x3 = Device Code  
x = 4 or 5  
G
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
stg  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
8.34  
83.4  
Unit  
_C/W  
_C/W  
Device  
Package  
Shipping  
Thermal Resistance, Junction−to−Case  
q
JC  
MJE243  
TO−225  
500 Units/Box  
500 Units/Box  
Thermal Resistance,  
Junction−to−Ambient  
q
JA  
TO−225  
MJE243G  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJE253  
TO−225  
500 Units/Box  
500 Units/Box  
TO−225  
(Pb−Free)  
MJE253G  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 11  
MJE243/D  

MJE243G 替代型号

型号 品牌 替代类型 描述 数据表
MJE243 ONSEMI

类似代替

POWER TRANSISTORS COMPLEMENTARY SILICON
MJE243 MOTOROLA

功能相似

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS
BD237 STMICROELECTRONICS

功能相似

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