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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MJE252LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
|
| MJE253 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| MJE253 | ISC |
获取价格 |
isc Silicon PNP Power Transistor |
|
| MJE253 | ONSEMI |
获取价格 |
POWER TRANSISTORS COMPLEMENTARY SILICON |
|
| MJE253 | MOTOROLA |
获取价格 |
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS |
|
| MJE253 | NJSEMI |
获取价格 |
Trans GP BJT PNP 100V 4A 3-Pin TO-126 |
|
| MJE253 | FOSHAN |
获取价格 |
TO-126 |
|
| MJE253G | ONSEMI |
获取价格 |
Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS |
|
| MJE253LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic |
|
| MJE254 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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