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MJE270G

更新时间： 2024-11-21 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
3页 59K
描述
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

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中文翻译

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MJE270G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-225包装说明：ROHS COMPLIANT, CASE 77-09, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.88最大集电极电流 (IC)：2 A
集电极-发射极最大电压：100 V配置：DARLINGTON
最小直流电流增益 (hFE)：1500JEDEC-95代码：TO-225
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：15 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管元件材料：SILICON标称过渡频率 (fT)：6 MHz
Base Number Matches：1

MJE270G 数据手册

 浏览型号MJE270G的Datasheet PDF文件第2页浏览型号MJE270G的Datasheet PDF文件第3页 
MJE270 (NPN),  
MJE271 (PNP)  
Complementary Silicon  
Power Transistors  
Features  
http://onsemi.com  
• High Safe Operating Area  
I
@ 40 V, 1.0 s = 0.375 A  
S/B  
2.0 AMPERE  
• Collector−Emitter Sustaining Voltage  
= 100 Vdc (Min)  
COMPLEMENTARY  
POWER DARLINGTON  
TRANSISTORS  
V
CEO(sus)  
• High DC Current Gain  
@ 120 mA, 10 V = 1500 (Min)  
h
FE  
100 VOLTS, 15 WATTS  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
100  
CB  
EB  
TO−225  
CASE 77  
STYLE 3  
V
5.0  
Collector Current − Continuous  
− Peak  
I
2.0  
4.0  
3
2
1
C
Base Current  
I
0.1  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
P
15  
0.12  
W
W/_C  
W
W/_C  
C
D
D
Derate above 25_C  
MARKING DIAGRAM  
Total Power Dissipation @ T = 25_C  
1.5  
0.012  
A
Derate above 25_C  
1 BASE  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
_C  
stg  
YWW  
JE27xG  
2 COLLECTOR  
3 EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.33  
83.3  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
Y
= Year  
R
q
JA  
WW  
= Work Week  
JE27x = Specific Device Code  
x= 0 or 1  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not normal  
operating conditions) and are not valid simultaneously. If these limits are exceeded,  
device functional operation is not implied, damage may occur and reliability may be  
affected.  
G
= Pb−Free Package  
ORDERING INFORMATION  
Device  
MJE270  
Package  
Shipping  
TO−225  
500 Units/Box  
500 Units/Box  
MJE270G  
TO−225  
(Pb−Free)  
MJE271  
TO−225  
500 Units/Box  
500 Units/Box  
MJE271G  
TO−225  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 6  
MJE270/D  
123

中文翻译

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MJE270G 替代型号

型号 品牌 替代类型 描述 数据表
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