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MJE2955T

更新时间： 2024-01-25 19:30:58
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
4页 132K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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MJE2955T 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.21.00.95
风险等级：5.32配置：SINGLE
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
认证状态：Not Qualified表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MJE2955T 数据手册

 浏览型号MJE2955T的Datasheet PDF文件第2页浏览型号MJE2955T的Datasheet PDF文件第3页浏览型号MJE2955T的Datasheet PDF文件第4页 
Order this document  
by MJE2955T/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general–purpose amplifier and switching applications.  
*Motorola Preferred Device  
•
•
DC Current Gain Specified to 10 Amperes  
High Current Gain — Bandwidth Product —  
10 AMPERE  
COMPLEMENTARY  
SILICON  
f
T
= 2.0 MHz (Min) @ I = 500 mAdc  
C
POWER TRANSISTORS  
60 VOLTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
75 WATTS  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
V
CB  
70  
Vdc  
V
EB  
5.0  
10  
Vdc  
I
C
Adc  
Base Current  
I
6.0  
75  
Adc  
B
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P †  
D
Watts  
0.6  
W/ C  
C
MJE3055T, MJE2955T  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
J
stg  
CASE 221A–06  
TO–220AB  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
1.67  
C/W  
JC  
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.  
10  
7.0  
100 µs  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
1.0 ms  
5.0 ms  
5.0  
dc  
down. Safe operating area curves indicate I – V  
limits of  
C
CE  
3.0  
2.0  
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
1.0  
0.7  
The data of Figure 1 is based on T  
= 150 C. T is vari-  
C
J(pk)  
able depending on conditions. Second breakdown pulse lim-  
its are valid for duty cycles to 10% provided T 150 C.  
T
= 150°C  
J
0.5  
SECOND BREAKDOWN LIMITED  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
J(pk)  
0.3  
0.2  
At high case temperatures, thermal limitations will reduce the  
power that can be handled to values less than the limitations  
imposed by second breakdown. (See AN415A)  
T
= 25°C (D = 0.1)  
C
0.1  
5.0  
7.0  
10  
20  
30  
50 60  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 1. Active–Region Safe Operating Area  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
1234

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MJE2955T 替代型号

型号 品牌 替代类型 描述 数据表
MJE2955TG ONSEMI

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 Complementary Silicon Plastic Power Transistors
MJE2955TTU FAIRCHILD

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 PNP Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
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MJE2955TA MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2955TAJ MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2955TAK ONSEMI

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 		TRANSISTOR 10 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE2955TAU ONSEMI

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 		10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2955TBG ONSEMI

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 		10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2955TC MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

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