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MJE2955T

更新时间: 2024-11-25 10:55:47
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描述
Complementary Silicon Power Ttransistors

MJE2955T 数据手册

  
TIGER ELECTRONIC CO.,LTD  
Product specification  
Complementary Silicon Power Ttransistors  
MJE3055T / MJE2955T  
DESCRIPTION  
It is intented for use in power  
amplifier and switching applications.  
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value Unit  
Symbol  
VCBO  
70  
V
VCEO  
VEBO  
IC  
60  
5
V
V
10  
6
A
Base Current  
IB  
A
Total Dissipation at  
Ptot  
Tj  
75  
150  
W
oC  
Max. Operating Junction Temperature  
Storage Temperature  
TO-220  
Tstg  
-55~150 oC  
O
ELECTRICAL CHARACTERISTICS  
( Ta = 25 C)  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Symbol  
Test Conditions  
Min.  
Typ.  
Max. Unit  
ICEO  
IEBO  
VCB=60V, IE=0  
VEB=5V, IC=0  
0.3  
5.0  
mA  
mA  
V
VCEO  
hFE(1)  
hFE(2)  
Collector-Emitter Sustaining Voltage  
DC Current Gain  
IC=100mA, IB=0  
VCE=4V, IC=4.0A  
VCE=4V, IC=10.0A  
60  
20  
5
100  
IC=4.0A,IB=400mA  
IC=10.0A,IB=3.3A  
1.1  
8.0  
Collector-Emitter Saturation Voltage  
V
VCE(sat)  
VBE(sat)  
fT  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
VCE=4V,IC=4.0A  
1.8  
V
VCE=10V,IC=500mA  
2
MHz  

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