Datasheet > MJE2955T

MJE2955T

更新时间： 2024-02-17 09:38:32

品牌	Logo	应用领域
TGS		晶体晶体管开关局域网
页数	文件大小	规格书
1页	71K
描述
Complementary Silicon Power Ttransistors

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中文翻译

获取价格

技术参数
数据手册

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MJE2955T 技术参数

生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	HTS代码：	8541.21.00.95
风险等级：	5.32	配置：	SINGLE
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MJE2955T 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

Complementary Silicon Power Ttransistors

MJE3055T / MJE2955T

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

Symbol

V_CBO

V_CEO

V_EBO

I_C

Base Current

I_B

Total Dissipation at

P_tot

T_j

150

^oC

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Symbol

Test Conditions

Min.

Typ.

Max. Unit

I_CEO

I_EBO

V_CB=60V, I_E=0

V_EB=5V, I_C=0

0.3

5.0

V_CEO

h_FE(1)

h_FE(2)

Collector-Emitter Sustaining Voltage

DC Current Gain

I_C=100mA, I_B=0

V_CE=4V, I_C=4.0A

V_CE=4V, I_C=10.0A

100

I_C=4.0A,I_B=400mA

I_C=10.0A,I_B=3.3A

1.1

8.0

Collector-Emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

f_T

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

V_CE=4V,I_C=4.0A

1.8

V_CE=10V,I_C=500mA

MHz

中文翻译

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与MJE2955T相关器件

型号	品牌	获取价格	描述	数据表
MJE2955T_03	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
MJE2955T_10	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE2955T_15	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE2955TA	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2955TAF	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2955TAJ	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2955TAK	ONSEMI	获取价格	TRANSISTOR 10 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE2955TAU	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2955TBG	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2955TC	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast